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MA: Fachverband Magnetismus

MA 11: Spin Transport and Orbitronics, Spin-Hall Effects I (joint session MA/TT)

MA 11.3: Vortrag

Dienstag, 18. März 2025, 10:00–10:15, H18

Orbital magnetoresistance in insulating antiferromagnets — •Christin Schmitt¹, Sachin Krishnia¹, Edgar Galíndez Ruales¹, Takashi Kikkawa², Duc Tran¹, Timo Kuschel¹, Eiji Saitoh², Yuriy Mokrousov^1,3, and Mathias Kläui¹ — ¹Institute of Physics, Johannes Gutenberg-University Mainz, 55128 Mainz, Germany — ²Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan — ³Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany

Insulating antiferromagnetic and ferrimagnetic materials are promising candidates for spintronic devices due to their intrinsic properties such as low damping [1]. Recently, orbital angular momentum (OAM) has emerged as a crucial concept in condensed-matter physics. Theoretical and experimental studies have highlighted that the orbital Hall effect (OHE) can enable orbital currents with efficiency orders of magnitude higher than that of spin Hall effects [2]. Here, we investigate magneto-resistance effects in magnetic systems [2,3]. We find that in TmIG the transverse magnetoresistance signal is increased significantly upon replacing Pt, a spin-current generator, by Cu*, a pure orbital-current generator. Further, we explore antiferromagnets with orbital magnetoresistance effects as pure orbital current is crucial for next generation pure orbitronics devices using abundant, cheap and environmentally friendly materials. [1] R. Lebrun, et al., Nature, 561, 222-225 (2018). [2] S. Ding, et al., Phys. Rev. Lett. 125, 177201 (2020). [3] S. Ding et al., Phys. Rev. Lett. 128, 067201 (2022).

Keywords: Antiferromagnet; Orbital magnetoresistance