Regensburg 2025 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
MA: Fachverband Magnetismus
MA 11: Spin Transport and Orbitronics, Spin-Hall Effects I (joint session MA/TT)
MA 11.7: Talk
Tuesday, March 18, 2025, 11:00–11:15, H18
Harnessing Orbital Hall Effect in Spin-Orbit Torque MRAM — •J. Omar Ledesma Martin1,2, Rahul Gupta1, Chloé Bouard2, Fabian Kammerbauer1, Iryna Kononenko1, Sylvain Martin2, Gerhard Jakob1,3, Marc Drouard2, and Mathias Kläui1,3 — 11 Institute of Physics, Johannes Gutenberg University Mainz, 55099, Mainz, Germany — 2Staudingerweg 7 — 3Department of Physics, Center for Quantum Spintronics, Norwegian University of Science and Technology, 7491, Trondheim, Norway
There is considerable potential in the Orbital Hall Effect (OHE) and the Spin Hall Effect (SHE) as electrical means for controlling the magnetization of spintronic devices. Here Ru stands out exhibiting an orbital Hall conductivity four times greater than the spin Hall conductivity of Pt. [1] This work assesses the efficiency of four distinct stacks in devices with perpendicular Magnetic Tunnel Junctions (MTJ). Following the formula Ta/OHE/Pt/[Co/Ni]x3/Co/MgO/CoFeB/Ta/Ru, where the OHE materials are Ru, Nb, and Cr. Additionally, a sample with Pt instead of OHE serves as a reference. The results demonstrate an improvement for the Ru samples, exhibiting higher damping-like torque and significantly lower switching current density compared to both the other samples and the Pt reference. These findings, including first-principle calculations, underscore the potential of Ru as an OHE material for enhancing the performance and power consumption of spintronic devices.
[1] R. Gupta et al., arXiv:2404.02821 (2024). Nature Comm. In press (2024)
Keywords: Orbital Hall Effect (OHE); Spin Orbit Torques (SOT); SOT-MRAM