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MA: Fachverband Magnetismus
MA 15: Poster I
MA 15.35: Poster
Dienstag, 18. März 2025, 10:00–12:30, P1
Theoretical study on in-plane, out-of-plane, and transverse anisotropic magnetoresistance effects for ferromagnetic films — •Satoshi Kokado1 and Masakiyo Tsunoda2 — 1Shizuoka University, Hamamatsu, Japan — 2Tohoku University, Sendai, Japan
We theoretically study the in-plane [1], out-of-plane [2], and transverse anisotropic magnetoresistance (AMR) effects [3] for a strong ferromagnet, Fe4N. We here use the electron scattering theory with an extrinsic mechanism, in which the conduction electron is scattered into the conduction state and the localized d states by impurities and so on [4]. The in-plane and out-of-plane AMR effects exhibit the negative AMR ratio with the twofold symmetry, while the transverse AMR effect shows the positive AMR ratio with the fourfold symmetry. The calculation results agree qualitatively well with the respective experimental results [1,2,3] for Fe4N. In addition, the peak structures of the AMR ratios reflect the probability densities of the current direction of the single atomic d states.
[1] M. Tsunoda et al., APEX 3, 113003 (2010).
[2] M. Tsunoda et al., unpublished.
[3] K. Kabara et al., AIP advances 6, 055818 (2016).
[4] S. Kokado et al., J. Phys. Soc. Jpn. 91, 044701 (2022), J. Phys. Soc. Jpn. 81, 024705 (2012), Adv. Mater. Res. 750-752, 978 (2013), Jpn. J. Appl. Phys. 55, 108004 (2016), J. Phys. Soc. Jpn. 88, 034706 (2019).
Keywords: anisotropic magnetoresistance effect; ferromagnetic film; extrinsic mechanism; electron scattering; spin-orbit interaction