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MA: Fachverband Magnetismus
MA 18: Functional Antiferromagnetism
MA 18.1: Vortrag
Dienstag, 18. März 2025, 14:00–14:15, H19
Switching of magnetic domains in a noncollinear antiferromagnet at the nanoscale — •Atul Pandey1,2, Prajwal Rigvedi1, Edouard Edouard3, Jitul Deka1, Jiho Yoon1, Wolfgang Hoppe2, James M. Taylor2, Stuart S. P. Parkin1, and Georg Woltersdorf1,2 — 1Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany — 2Institute of Physics, Martin Luther University Halle Wittenberg, Von Danckelmann Platz 3, 06120 Halle, Germany — 3Max Planck Institute for Chemical Physics of Solids, Nothnitzer Straße 40, 01187 Dresden, Germany
Antiferromagnets that display very small stray magnetic field are ideal for spintronic applications. Of particular interest are non-collinear, chiral antiferromagnets of the type Mn3X (X=Sn, Ge), which display a large magnetotransport response that is correlated with their antiferromagnetic ordering. The ability to read out and manipulate this ordering is crucial for their integration into spintronic devices. These materials exhibit a tiny unbalanced magnetic moment such that a large external magnetic field can, in principle, be used to set the material into a single antiferromagnetic domain. However, in thin films of Mn3Sn, we find that such fields induce only a partial magnetic ordering. By detecting two orthogonal in-plane components of the magnetic order vector, we find that the non-switchable fraction has a unidirectional anisotropy. This also enables us to visualize switching along multiple easy axes in Mn3Sn. Studying the switching at the nanoscale allows us to correlate the pining behavior to crystal grain boundaries in the Mn3Sn nanowire structures.
Keywords: noncollinear antiferromagnet; SNOM; Spintronics; Magnetic imaging; Magnetic switching