Regensburg 2025 – scientific programme
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MA: Fachverband Magnetismus
MA 18: Functional Antiferromagnetism
MA 18.3: Talk
Tuesday, March 18, 2025, 14:30–14:45, H19
Domain wall patterns in granular Cr2O3 thin films — •Igor Veremchuk1, Oleksandr V. Pylypovskyi1, Peter Rickhaus2, Natascha Hedrich3, Artem V. Tomilo1, Tobias Kosub1, Kai Wagner3, Brendan Shields3, Gediminas Seniutinas2, Vicent Borras2, Paul Lehmann3, Liza Žaper2, Paulina J. Prusik1, Pavlo Makushko1, René Hübner1, Jüren Fassbender1, Denis D. Sheka4, Patrick Maletinsky3, and Denys Makarov1 — 1Helmholtz-Zentrum Dresden-Rossendorf e.V.,01328 Dresden, Germany — 2Qnami AG, CH-4132 Muttenz, Switzerland — 3University of Basel, Basel CH-4056, Switzerland — 4Taras Shevchenko National University of Kyiv, 01601 Kyiv, Ukraine
Cr2O3 provides possibility to control its magnetic order parameter by an external electric field rendering it a prospective material for spintronic applications. We developed a material model for granular thin Cr2O3 films. The coupling between the grains influences the equilibrium domain pattern due to pinning of antiferromagnetic domain walls at the grain boundaries. By the characterization of the experimentally measured domain patterns via fractal dimension, we determine the inter-grain exchange coupling [1]. In contrast to extended films, finite-size samples can be set into a single-domain state even via a zero-field cooling procedure. Such a sample should be small enough for the propagation of thermally driven domain walls through the energy landscape formed by grain boundaries [2].
[1] O. V. Pylypovskyi et al., Phys. Rev. Appl. 20, 014020 (2023). [2] P. Rickhaus, O. V. Pylypovskyi et al., Nano Lett. 24, 13172 (2024).
Keywords: magnetoelectricity; domain walls; granular antiferromagnet; thin film; bit pattern memory