Regensburg 2025 – scientific programme

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MA: Fachverband Magnetismus

MA 2: Multiferroics and Magnetoelectric Coupling (joint session MA/KFM)

MA 2.6: Talk

Monday, March 17, 2025, 10:45–11:00, H16

Ferroelectric hafnium oxide-based multiferroic bilayers for magnetoelectric spin-orbit devices — •Maximilian Lederer, Johannes Hertel, Christoph Durner, Tatiana Gurieva, and Benjamin Lilienthal-Uhlig — Fraunhofer IPMS, Center Nanoelectronic Technologies, Dresden, Germany

This study investigates multiferroic heterostructures comprising Hf0.5Zr0.5O2 (HZO) with Co/Pt top and TiN bottom electrodes on Si substrates. Using advanced deposition techniques, sub-nanometric thin films were fabricated. The research highlights achieving both ferroelectricity and perpendicular magnetic anisotropy simultaneously through a two-step annealing process. These properties are crucial for magnetoelectric spin-orbit (MESO) devices, which offer significant advantages such as lower power consumption and enhanced data storage capabilities. Insights into crystallization and diffusion processes were gained through various structural investigation methods. Additionally, the study demonstrates the manipulation of magnetic and ferroelectric domains using different microscopy techniques, underscoring the potential of MESO devices in next-generation electronic applications.

Keywords: hafnium oxide; piezo force microscopy; multiferroic bilayer; CMOS integration