Regensburg 2025 – wissenschaftliches Programm

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MA: Fachverband Magnetismus

MA 31: Poster II

MA 31.10: Poster

Mittwoch, 19. März 2025, 17:00–19:30, P1

Epitaxy and Magnetic Properties of Fe films on GaAs(001) in Dependence of the Electrodeposition Procedure — •Danny P. Quint¹, Raphael Kohlstedt^2,3, Olav Hellwig^2,3, and Karin Leistner¹ — ¹Institute of Chemistry, TU Chemnitz — ²Institute of Physics, TU Chemnitz — ³Research Center MAIN, TU Chemnitz

Epitaxial Fe/GaAs heterostructures are of great interest for spintronic devices.[1] The quality of the epitaxial growth is crucial for the functionality. While MBE is traditionally used to fabricate Fe/GaAs structures, electrodeposition (ED) offers a cost-efficient alternative. [2,3] We systematically examined the impact of an initial voltage pulse during ED of Fe films (approx. 20 nm thick) on GaAs(001) on their epitaxy and magnetic behavior. We compare depositions without a pulse (A), with a pulse after immersion in the electrolyte (B), and with a pulse during immersion in the electrolyte (C). The angle-dependent ferromagnetic resonance field, remanence and coercivity of the deposited films were analyzed by in-plane FMR and MOKE, respectively. The results show an enhanced fourfold anisotropy for the films prepared with the pulsed routines, with method C approaching the expected behavior for dominating cubic magnetocrystalline anisotropy in epitaxial Fe(001) films. The quality of epitaxial growth is investigated by X-ray diffraction. This work highlights the importance of optimizing the ED procedure to achieve epitaxial Fe films on GaAs and opens pathways for the broader application of ED in spintronic materials research. [1] Wastlbauer et al., Adv. Phys., 54, 2005, 137. [2] Liu et al., ESL, 7, 2004, D11. [3] Guo et al., Nano Lett., 22, 2022, 4006.

Keywords: electrodeposition; iron; epitaxy; Kerr microscopy; ferromagnetic resonance