Regensburg 2025 – scientific programme
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MA: Fachverband Magnetismus
MA 41: Poster III
MA 41.11: Poster
Thursday, March 20, 2025, 15:00–17:30, P3
Enhancing the ultrafast THz emission in spintronic emitters via interface engineering — •Krishna Rani Sahoo1, David Stein2, Jannis Bensmann1, Alexander Heise2, Robert Schmidt1, Steffen Michaelis de Vasconcellos1, Manfred Albrecht2, and Rudolf Bratschitsch1 — 1Institute of Physics, University of Münster, Wilhelm-Klemm-Str. 10, 48149 Münster, Germany — 2Institute of Physics, University of Augsburg, Universitätsstr. 1 Nord, 86159 Augsburg, Germany
Ultrafast THz spintronic emitters are based on the generation of THz radiation due to spin-to-charge conversion in magnetic (M) and nonmagnetic (NM) bilayer stacks. The development of THz spintronic emitters focuses on enhancing their intensity, manipulating the THz signal, and exploring potential applications. To improve the performance of THz spintronic emitters, it is important to choose suitable material combinations (M/NM) and tailor the interface between the M and NM layers. In this study, we focus on engineering the interface of archetypical Fe/Pt THz spintronic emitters via irradiation with foreign atoms. Indeed, we find that the THz emission can be substantially increased by the implantation of ions at the Fe/Pt interface. Our result paves the way for efficient low-cost ultrafast THz spintronic emitters based on thin metal films.
Keywords: THz spintronic emitters; spin-to-charge conversion; spin Hall effect