Regensburg 2025 – scientific programme
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MM: Fachverband Metall- und Materialphysik
MM 21: Interface Controlled Properties, Nanomaterials and Microstructure Design
MM 21.4: Talk
Wednesday, March 19, 2025, 16:30–16:45, H22
Optical and electrical properties of borophene and borophene/silicon junction — •yaser abdi1, 2, masoud taleb1, alireza eskandari2, zahra alavi2, mohsen moayedi2, and nahid talebi1 — 1Institute of Experimental and Applied Physics, Kiel University, 24118 Kiel, Germany — 2Department of Physics, University of Tehran, 1439955961 Tehran, Iran
Borophene, a 2D monolayer of boron atoms, possesses unique properties that have led scientists to conclude that it could be an excellent alternative to graphene in future electronic device applications. In this talk, which is based on our recent work on synthesis [1] and characterization [2] of optical [3] and electrical properties of borophene and borophene/silicon Schottky junction, I will discuss about the growth of borophene using a chemical vapor deposition approach and investigation of its optical and electrical behaviors. Leveraging advanced deep-subwavelength cathodoluminescence spectroscopy, we reveal the extreme anisotropic optical response of borophene in the visible range[3]. Finally, direct growth of borophene on silicon to make Schottky junction will be explained and some opto-electrical measurements will be presented. The optoelectronic response of a borophene/silicon-based detector is approximately ten times higher than that of detectors fabricated by transferring 2D materials onto silicon, due to the excellent junction formed by the direct growth of borophene on silicon.
[1] ACS Applied Materials & Interfaces 2021 13 (7), 8844-8850 [2] ACS Applied Nano Materials 2024 7 (11), 13712-13719 [3] arXiv preprint arXiv:2404.13609v2
Keywords: Borophene; 2d Material; Electrical junction; Plasmon; optoelectronic