Regensburg 2025 – wissenschaftliches Programm
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MM: Fachverband Metall- und Materialphysik
MM 32: Transport in Materials: Diffusion, Charge or Heat Conduction
MM 32.6: Vortrag
Donnerstag, 20. März 2025, 16:30–16:45, H22
Electrical characterization of the gate length dependence in graphene field-effect transistors — •Daniel Nickel1, Daniele Capista1, Rasuole Lukose1, Christian Wenger1,2, and Mindaugas Lukosius1 — 1IHP - Leibnitz Institute for High Performance Microelectronics, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany — 2BTU Cottbus Senftenberg, Platz der Deutschen Einheit 1, 03046 Cottbus, Germany
Integrating graphene into silicon complementary metal-oxide semiconductor technology for electronic and optoelectronic applications holds great promise but faces challenges such as limited graphene mobility. This work addresses this limitation by using graphene field-effect transistors (GFETs) to analyze the influence of fabrication parameters on the electrical properties of graphene and to investigate the gate length dependence of sheet mobilities at T = 300 K. The GFET devices are fabricated with a wolfram back-gate on a 200 mm SiO2/Si wafer, transferring chemical vapor deposition-grown graphene, patterning it, and forming graphene channel contacts with Pd/Au and Ni. The Dirac point is well detected in electrical measurements, indicating the transition between p- and n-type conduction. Graphene mobility is evaluated using the transconductance method and total resistance fit, revealing peak mobilities of µp = 715 cm2/Vs for the p-branch and µn = 986 cm2/Vs for the n-branch, with dependencies on channel length and contact metals used. Funding was provided by the EU’s Horizon 2020 research and innovation program under the Graphene Flagship grant agreement no. 101189797.
Keywords: Graphene; Field-effect transistors; Carrier mobility; Contact metal