Regensburg 2025 – scientific programme
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O: Fachverband Oberflächenphysik
O 101: Topology and Symmetry-protected Materials (joint session O/TT)
O 101.1: Talk
Friday, March 21, 2025, 10:30–10:45, H25
Topological material in the III–V family: heteroepitaxial InBi on InAs — •L. Nicolaï1, J. Minár1, M.C. Richter2,3, O. Heckmann2,3, J.-M. Mariot4, U. Djukic2, J. Adell5, M. Leandersson5, J. Sadowski6, J. Braun7, H. Ebert7, J.D. Denlinger8, I. Vobornik9, J. Fujii9, P. Šutta1, G.R. Bell10, M. Gmitra11,12, and K. Hricovini2,3 — 1Univiversity of West Bohemia — 2CY Cergy-Paris Université — 3Université Paris-Saclay — 4Sorbonne Université — 5Lund University — 6Polish Academy of Sciences — 7LMU München — 8ALS — 9Istituto Officina dei Materiali, CNR — 10University of Warwick — 11Pavol Jozef Šafárik University in Košice — 12Slovak Academy of Sciences
InBi(001) is formed epitaxially on InAs(111)-A by depositing Bi on to an In-rich surface. ARPES measurements reveal topological electronic surface states, close to the M high symmetry point. InBi surprisingly shows coexistence of Bi and In surface terminations. For the Bi termination, the study gives a consistent physical picture of the topological surface electronic structure of InBi(001) terminated by a Bi bilayer rather than a surface formed by splitting to a Bi monolayer termination. Theoretical calculations based on relativistic DFT and the one-step model of photoemission clarify the relationship between the InBi(001) surface termination and the topological surface states, supporting a predominant role of the Bi bilayer termination. Furthermore, a tight-binding model based on this Bi bilayer termination with only Bi–Bi hopping terms gives a deeper insight into the spin texture[1]. [1] Nicolaï et al. Phys. Rev. Research 6.4 (2024): 043116.
Keywords: InBi; III-V family; topological surface states; photoemission; Rashba-Dresselhaus spin texture