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O: Fachverband Oberflächenphysik

O 12: Nanostructures at Surfaces I

O 12.7: Vortrag

Montag, 17. März 2025, 16:30–16:45, H6

Template-Assisted Synthesis of Fe₃O₄ Nanodots for High-Density Resistive Switching Memory — •Yifan Xu^1,2, Connie Bednarski-Meinke², Erkai Wang³, Asmaa Qdemat², Emmanuel Kennzinger², Felix Gunkel³, Regina Dittmann³, Yen-Po Liu³, Oleg Petracic^2,1, and Mai Hussein Hamed^2,4 — ¹Heinrich Heine University Düsseldorf, Faculty of Mathematics and Natural Sciences, 40225 Düsseldorf, Germany — ²Jülich Centre for Neutron Science (JCNS-2), JARA-FIT, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany — ³Peter Grünberg Institute and JARA-FIT, Forschungszentrum Jülich GmbH, Jülich, Germany — ⁴Faculty of Science, Helwan University, 11795 Cairo, Egypt

The growing demand for high-density memory solutions has driven the exploration of innovative fabrication techniques. We introduce a bottom-up approach for synthesizing ordered Fe₃O₄ nanodots for nanoscale resistive switching memory applications. Using anodic aluminum oxide (AAO) templates as masks, Fe₃O₄ nanodots on Nb:SrTiO₃ substrate were fabricated via pulsed laser deposition. Scanning electron microscopy (SEM) confirms the nanodots’ uniformity. Grazing incidence X-ray scattering (GISAXS) reveals a high degree of long-range ordering. Magnetometry measurements show that the Verwey transition temperature (T_V) and coercivity are preserved compared to continuous thin films. Conductive atomic force microscopy (cAFM) confirms well-defined nanodots using current maps. By sweeping the voltage on a single nanodot, set and reset processes are observed within ±2V.

Keywords: Iron oxide; resistive switching; nanodot; cAFM; STO