Regensburg 2025 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 13: Organic Molecules on Inorganic Substrates: Adsorption and Growth

O 13.4: Vortrag

Montag, 17. März 2025, 15:45–16:00, H8

Growth of N-heterocyclic carbenes on modified silicon surfaces — •Marie-Louise Fraser¹, Milan Kubicki¹, Ankita Das², Mowpriya Das², Preeti Chahar², Martin Franz¹, Frank Glorius², and Mario Dähne¹ — ¹Technische Universität Berlin, Institut für Festkörperphysik, Berlin, Germany — ²Universität Münster, Organisch-Chemisches Institut, Münster, Germany

Today’s semiconductor industry is mainly based on silicon, thus the growth of organic films on silicon surfaces is a highly promising research field. However, the high number of dangling bonds typically present on silicon surfaces renders them often less suitable for molecular growth. With surface modifications more suitable silicon substrates can be produced. One such modification is a rare earth silicide layer on the Si(111) surface enabling growth of highly ordered monolayers [1]. Another suitable substrate is Si(111) modified by boron, as demonstrated e.g. for N-heterocyclic carbenes (NHCs) [2]. NHCs have been demonstrated to be particularly promising ligands for surface modification and functionalization. Here, scanning tunneling microscopy is used to examine the growth of the NHC molecule BIMe on both boron and rare-earth modified Si(111) surfaces. On both substrates, films with coverages ranging from submonolayers to complete monolayers could be successfully grown, allowing the determination of the adsorption geometry and of the ordering behavior in the monolayer. [1] M. Kubicki et al., J. Phys. Chem. C 128, 13347 (2024). [2] M. Franz et al., Nat. Chem. 13, 828 (2021).

Keywords: STM; NHC