Regensburg 2025 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 20: Poster Scanning Probe Microscopy: Light-Matter Interactions at the Atomic Scale
O 20.3: Poster
Montag, 17. März 2025, 18:00–20:00, P2
Charging of atomic defects in 2H-MoTe2 under infrared illumination — •Friedemann Lohss, Florian Faaber, Vibhuti Rai, Junyoung Sim, Christian Lotze, and Katharina J. Franke — Freie Universität Berlin, Department of Physics, Arnimallee 14,14195 Berlin, Germany
The electronic properties of semiconductors are heavily shaped by the concentration and type of defects present in the material. The sub-nanometer resolution of scanning tunneling microscopy (STM) allows to locally probe such defects. Here we characterize the response of the semiconductor 2H-MoTe2 to infrared illumination in an STM at cryogenic temperature. We observe the formation of disc-shaped regions of increased conductivity around some local defects, likely stemming from charging and tip-induced band bending. We characterize the different defect states occuring in this material.
Keywords: Scanning tunnelling microscopy; Light driven STM; Infrared excitations; Time-resolved measurements