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O: Fachverband Oberflächenphysik

O 29: 2D Materials: Electronic Structure and Exitations I (joint session O/HL/TT)

O 29.6: Vortrag

Dienstag, 18. März 2025, 11:45–12:00, H8

Electronic structure of V-doped WSe₂ — •Jana Kähler^1,2, Florian K. Diekmann^1,2, Matthias Kalläne^1,2,3, Tim Riedel^1,2, Adina Timm^1,2, Anja Yalim^1,2, Jens Buck^1,2, Meng-Jie Huang², Jules M. Knebusch^1,2, Luka Hansen^1,3, Jan Benedikt^1,3, and Kai Rossnagel^1,2,3 — ¹Institut für Experimentelle und Angewandte Physik, Christian-Albrechts-Universität zu Kiel, 24098 Kiel, Germany — ²Ruprecht Haensel Laboratory, Deutsches Elektronen-Synchrotron DESY, 22607 Hamburg — ³Kiel Nano, Surface and Interface Science KiNSIS, Christian-Albrechts-Universität zu Kiel, 24098 Kiel, Germany

Spintronics represents a promising and energy-efficient alternative to conventional electronics, with significant potential applications, e.g., in areas such as classical and quantum computing. The vanadium-doped layered transition metal dichalcogenide 2H-WSe₂ is a promising candidate to fulfill the desired properties as a room-temperature magnetic semiconductor with gating tunability. Here, we present a comprehensive electronic structure study of chemical vapor transport-grown pristine and V-doped WSe₂ by soft X-ray, VUV and 11eV-laser ARPES, highlighting the influence of a low V doping concentration on the electronic structure of WSe₂.

Keywords: TMDC; Electronic structure; Magnetic semiconductor