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O: Fachverband Oberflächenphysik

O 33: Poster Graphene: Electronic Structure and Excitations

O 33.10: Poster

Dienstag, 18. März 2025, 13:30–15:30, P3

Electronic and structural properties of a Sn Mott phase proximitized to graphene — C. Ghosal¹, •H.-T. Ngo¹, S. Ryee², Z. Mamiyev¹, N. Witt^2,3, T. Wehling^2,3, and C. Tegenkamp¹ — ¹Institut für Physik, TU Chemnitz — ²Institute of Theoretical Physics, U Hamburg — ³The Hamburg Centre for Ultrafast Imaging, Hamburg

Graphene, renowned for its exceptional electronic and optical properties as a robust 2D material, traditionally lacks electronic correlation effects. Proximity coupling offers a promising method to endow quantum materials with novel properties. In this study, we achieved such a proximity coupling by intercalating Sn between the buffer layer of graphene on SiC(0001). In the √3-areas, the Sn-p_z electrons exhibit robust correlation effects manifest as characteristic Hubbard bands analyzed by STS and EELS. Thereby, the system revealed a spatially modulated hybridization between the Dirac and the correlated electrons depending on the Sn sites with respect to the graphene lattice. The DFT and DMFT calculations show excellent agreement regarding the spectral properties. The analyses revealed further that besides the hybridization and Coulomb interaction also the charge transfer plays an important role for electronic state that emerges in these artificial correlated systems.

Keywords: Mott; graphene; proximity