Regensburg 2025 – scientific programme
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O: Fachverband Oberflächenphysik
O 33: Poster Graphene: Electronic Structure and Excitations
O 33.13: Poster
Tuesday, March 18, 2025, 13:30–15:30, P3
non-equilibrium carrier dynamics of a graphene - 2D Mott insulator interface — Maria-Elisabeth Federl1, •Franziska Bergmeier1, Zamin Mamiyev2, Niklas Witt3, Tim Wehling3, Christoph Tegenkamp2, and Isabella Gierz1 — 1University of Regensburg — 2Technical University Chemnitz — 3University of Hamburg
Hybridization between localized and itinerant electrons is believed to be responsible for the formation of exotic electronic states including heavy-fermion behaviour or unconventional superconductivity. Confinement heteroepitaxy, where novel 2D structures are stabilized at the interface between epitaxial graphene and SiC substrate, provides a pathway to engineer proximity-coupling between the massless carriers in graphene and the carriers in the underlying layer. We intercalated graphene with Sn, where the (√3×√3)R30∘ phase formed on SiC(0001) is believed to be a Mott insulator [1], and used time- and angle-resolved photoemission spectroscopy (trARPES) as well as density functional theory (DFT) to search for indications of interlayer hybridization that might pave the wave towards the realization of exotic electronic phases.
[1] Phys. Rev. Lett. 114, 247602 (2015)
Keywords: trARPES; graphene; Sn; SiC; heteroepitaxy