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O: Fachverband Oberflächenphysik

O 33: Poster Graphene: Electronic Structure and Excitations

O 33.14: Poster

Dienstag, 18. März 2025, 13:30–15:30, P3

Sequential Intercalation of Epitaxial Graphene with Multiple Elements — •Niels Rösch, Mohammad Elkhawaga, Philip Schädlich, Fabian Göhler, and Thomas Seyller — Chemnitz University of Technology, Institute of Physics, 09126 Chemnitz, Germany

The intercalation of epitaxial graphene on SiC(0001) is a field of research that currently attracts attention. On one hand it provides the possibility to fine-tune the properties of the graphene layer. On the other hand it also is a means to fabricate two-dimensional materials in a confined state [1,2].

In this study we test the possibility to synthesize binary compounds by sequential intercalation of two elements. As test cases we have chosen the topological insulator Bi₂Se₃ [3] and the superconductor FeSe [4]. To that end, Bi or Fe is first intercalated using a deposition and annealing approach. This is followed by an exposure to a selenium-rich atmosphere at elevated temperatures. Samples are characterized by photoelectron spectroscopy and electron diffraction.
[1] Z. Y. Al Balushi et al., Nat. Mater (2016) 1166.
[2] N. Briggs et al., Nat. Mater. 19 (2020) 637.
[3] H. Zhang et al., Nat. Phys. 5 (2009) 438.
[4] J.-F. Ge et al., Nat. Mater. 14 (2014) 285.

Keywords: Epitaxial Graphene; Intercalation; Siliconcarbide