Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
O: Fachverband Oberflächenphysik
O 33: Poster Graphene: Electronic Structure and Excitations
O 33.16: Poster
Dienstag, 18. März 2025, 13:30–15:30, P3
Electronic and structural properties of Bi-intercalated epitaxial graphene on SiC(0001) — Niclas Tilgner1, Susanne Wolff1, Andres D. Peña Unigarro1, Philip Schädlich1, Fabian Göhler1, Bharti Matta2, Philipp Rosenzweig3, Kathrin Küster2, Mark Hutter4, Monja Stettner4, Hao Yin4, Serguei Soubatch4, François C. Bocquet4, Tien-Lin Lee5, Christian Kumpf4, Ulrich Starke2, Sibylle Gemming1, and •Thomas Seyller1 — 1Institut für Physik, TU Chemnitz — 2Max Planck Institut für Festkörperforschung, Stuttgart — 3Physikalisches Institut, Universität Stuttgart — 4Peter Grünberg Institut, Forschungszentrum Jülich — 5Diamond Light Source, United Kingdom
The intercalation of epitaxial graphene on SiC(0001) is a research area that currently attracts attention. Not only does it provide the possibility to fine-tune the properties of the graphene layer, it also allows fabricating two-dimensional materials in a confined state. Using a variety of experimental (LEED, LEEM, XPS, ARPES, XSW) and theoretical (DFT) approaches we studied the structural and electronic properties of different intercalated Bi phases that are formed depending on the preparation conditions. While a dense phase with a (1×1) periodicity with respect to SiC(0001) shows metallic properties, a diluted (√3×√3)R30∘ phase appears insulating. Upon annealing in hydrogen, the latter can be transformed into a layer of bismuthene. However, while the bismuthene is arranged with the same periodicity, DFT calculations suggest that the transition is accompanied by a major structural rearrangement.
Keywords: graphene; silicon carbide; intercalation; bismuth