Regensburg 2025 – scientific programme
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O: Fachverband Oberflächenphysik
O 33: Poster Graphene: Electronic Structure and Excitations
O 33.18: Poster
Tuesday, March 18, 2025, 13:30–15:30, P3
Growth dynamics of the graphene buffer layer on SiC(0001) grown by polymer-assisted sublimation growth (PASG) — •Julia Guse1, Teresa Tschirner1, Stefan Wundrack1, Kathrin Küster2, Ulrich Starke2, Philip Schädlich3, Thomas Seyller3, Klaus Pierz1, and Hans Werner Schumacher1 — 1Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany — 2Max-Planck-Institut für Festkörperforschung, Stuttgart — 3Institut für Physik, TU Chemnitz
Fabrication of two-dimensional (2D) heterostructures using epitaxial graphene on SiC is gaining interest for engineering new electronic material systems. Important for the quality of the epigraphene layer is the 0th graphene layer, the buffer layer, being covalently bonded to the SiC substrate. However, there is still conflicting theoretical and experimental evidence of the structural properties of the buffer layer and its influence on epigraphene. Further, the quality of this buffer layer is not well defined and systematic studies are still lacking. We use an advanced growth technique preventing step bunching and large terrace step heights to achieve high quality buffer layer on millimeter scale. The buffer layer is grown by thermal sublimation in an argon atmosphere and by applying the polymer-assisted sublimation growth (PASG) method. By pretreatment of the SiC substrate which supplies additional carbon during the initial nucleation process the SiC surface is stabilized by rapid buffer layer formation which prevents step bunching. We investigate the growth parameters for homogeneous buffer layer formation and systematically study its growth dynamics.
Keywords: SiC; epitaxy; buffer layer