Regensburg 2025 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 33: Poster Graphene: Electronic Structure and Excitations
O 33.5: Poster
Dienstag, 18. März 2025, 13:30–15:30, P3
Liquid metal intercalation of epitaxial graphene Hall bar devices on SiC — •Marc Bothe1,2, Stefan Wundrack1,2, Teresa Tschirner1, Markus Gruschwitz3, Yefei Yin1, Klaus Pierz1, Frank Hohls1, Rainer Stosch1, Christoph Tegenkamp3, Hans Werner Schumacher1, and Andrey Bakin2 — 1Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany — 2Institut für Halbleitertechnik, TU Braunschweig, Hans-Sommer-Str. 66, 38106 Braunschweig — 3Institut für Physik, Technische Universität Chemnitz, Reichenhainer Strasse 70, 09126 Chemnitz, Germany
Epitaxial graphene grown on SiC is a promising platform for metal intercalation, enabling the investigation of proximity effects. Metal intercalation relies on the controlled introduction of lattice defect densities in monolayer graphene, achieved through plasma treatment. This is followed by liquid metal intercalation, during which atoms diffuse through lattice defects and propagate beneath the graphene. However, the use of metal intercalated graphene samples for device fabrication presents two challenges. First, solvents used for lithography often lead to metal deintercalation. Second, lattice defects in graphene compromise the structural and electronic integrity of the graphene device. We use an alternative strategy that combines lithography with metal intercalation through predefined channels. Initial measurements of Hall bar structures intercalated with gallium show superconducting behavior, demonstrating the potential of this approach for advanced device applications.
Keywords: graphene; metal intercalation; transport measurements; Hall bar; superconductivity