Regensburg 2025 – scientific programme
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O: Fachverband Oberflächenphysik
O 33: Poster Graphene: Electronic Structure and Excitations
O 33.6: Poster
Tuesday, March 18, 2025, 13:30–15:30, P3
Mesoscopic Lateral Intercalation Dynamics of Tin Between the Epitaxial Buffer Layer of Graphene and SiC — •Benno Harling1, Zamin Mamiyev2, Christoph Tegenkamp2, and Martin Wenderoth1 — 1IV. Physical Institute, Georg-August-University Göttingen, Germany — 2Analysis of Solid Surfaces, Nanostructures and Quantum Materials, TU Chemnitz, Germany
Within the challenges of modern electronics, the dynamics of intercalation in layered structures is key for pushing the boundaries of technological limits. Fine-tuned control and a deeper understanding of the intercalation process is needed. Our study focuses on the lateral dynamics of this intercalation process. Whereas penetration of the graphene sheet was already often discussed [1], the lateral atom transport processes according to the mesoscopic landscape of the substrate has been less addressed. Kelvin Probe Force Microscopy (KPFM) was used to investigate an epitaxial graphene buffer layer intercalated with tin. A diffusion edge to the pristine buffer layer can be identified with this method down to the mesoscopic scale below 100 nanometers. On a vicinal surface, we find surface steps as a clear barrier for diffusion. Material transfer over the substrate steps is mediated by a local defect, i.e. local pin-holes. Moreover, we do not observe nucleation on the terrace, but the decoration of the next step by tin. Faster diffusion at the step edges leads to directional growth of the intercalated phase.
Financial support by the DFG within research unit FOR5242 is greatly acknowledged.
[1] Wu et al., Prog. Surf. Sci. 96, 100637, 2021
Keywords: Graphene; Intercalation; KPFM; Epitaxy; Diffusion