Regensburg 2025 – scientific programme
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O: Fachverband Oberflächenphysik
O 36: Poster 2D Materials: Electronic Structure and Exitations (joint session O/HL)
O 36.3: Poster
Tuesday, March 18, 2025, 13:30–15:30, P3
Investigation of the electronic structure of 1T-Ta1−xMoxS2 using 11eV-laser ARPES — •Adina Timm1,2, Florian K. Diekmann1,2, Jana Kähler1,2, Matthias Kalläne1,2,3, Tim Riedel1,2, and Kai Rossnagel1,2,3 — 1Institut für Experimentelle und Angewandte Physik, Christian-Albrechts-Universität zu Kiel, 24098 Kiel, Germany — 2Ruprecht Haensel Laboratory, Deutsches Elektronen-Synchrotron DESY, 22607 Hamburg, Germany — 3Kiel Nano, Surface and Interface Science KiNSIS, Christian-Albrechts-Universität zu Kiel, 24098 Kiel, Germany
The ability to modify the electronic structure of quantum materials by controlling charge density waves (CDWs) offers various possibilities for use in next-generation technologies as electronic and optoelectronic components. A material platform for testing this approach is 1T-TaS2, which exhibits different temperature-dependent CDWs that we aim to tune by doping. Using 11eV-laser ARPES, we determine the differences in the electronic band structure of both doped and pristine TaS2 crystals. The dopant molybdenum was introduced into TaS2 during crystal growth by chemical vapor transport. The photoemission results show that different CDW phases are present at low doping concentrations of less than one percent with modified transition temperatures.
Keywords: TMDC; CDW; Tantaldisulfid