Regensburg 2025 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

O: Fachverband Oberflächenphysik

O 36: Poster 2D Materials: Electronic Structure and Exitations (joint session O/HL)

O 36.7: Poster

Dienstag, 18. März 2025, 13:30–15:30, P3

Characterization of surficial defect states in Mott insulator 1T-TaS₂ — •Junyoung Sim, Vibhuti Rai, Christian Lotze, and Katharina J. Franke — Freie Universtät Berlin, Department of Physics, Arnimallee 14, 14195 Berlin, Germany

The Mott insulating state in 1T-TaS₂, arising from strong correlations among unpaired electrons within its charge density wave superlattice, is distinct from a trivial band insulator and serves as a model system for exploring the dynamics of exotic many-body states [1]. Here, we investigate bulk 1T-TaS₂ using scanning tunneling microscopy (STM) at 5 K. We find arious nanoscopic defects including vacancies, and domain. Additionally, we adsorb transition metal adatoms on the bare surface. Using tunneling spectroscopy, we map out their electronic signatures and compare them to prior studies [2].

[1] Hellmann et al. Phys. Rev. Lett. 105, 187401 (2010)

[2] Fei et al. AAPPS Bull. 32, 20 (2022)

Keywords: Scanning tunneling microscopy; TaS2; Mott insulator