Regensburg 2025 – scientific programme

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O: Fachverband Oberflächenphysik

O 37: Poster 2D Materials Beyond Graphene: Growth, Structure and Substrate Interaction (joint session O/HL)

O 37.2: Poster

Tuesday, March 18, 2025, 13:30–15:30, P3

Scanning Tunneling Microscopy and Spectroscopy of epitaxial grown TaS₂ on GaN (0001) — •Jan-Niclas Schmidt, Constantin Hilbrunner, Georg A. Traeger, Jörg Malindretos, Angela Rizzi, and Martin Wenderoth — University of Göttingen, IV. Physikalisches Institut, Fridrich-Hund-Platz 1, 37077 Göttingen

Tantalum Disulfide crystals are interesting due to its complex phase diagram including the effect of Charge Density Waves. We are interested in how the layer thickness influences properties of Tantalum Disulfide. With Molecular Beam Epitaxy a three monolayer thick film of 2H-Tantalum Disulfide was grown on Gallium Nitride. To gain insight into the growth mechanism, the sample was transferred to a low temperature Scanning Tunneling Microscope (STM) operated at 80 K. To avoid any surface contamination, the transfer was done with a portable ultrahigh vacuum chamber. The constant-current STM-topography show small nanometer-sized, trigonal islands on a rough layer with some holes. The spectroscopy data show metallic behavior for the island as well as for the layer below.
This work is financially supported by the DFG through the SFB1073.

Keywords: Tantalum Disulfide; Scanning Tunneling Microscopy; Molecular Beam Epitaxy; Thin Film; 2D-Materials