Regensburg 2025 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
O: Fachverband Oberflächenphysik
O 44: Poster Oxides and Insulator Surfaces: Structure, Epitaxy and Growth
O 44.2: Poster
Dienstag, 18. März 2025, 18:00–20:00, P2
Search for crystalline SiO2 on the wet chemically treated 6H-SiC(0001) surface — •Paul Schöngrundner1, Igor Sokolovic2, and Ulrike Diebold2 — 1Department of Physical Chemistry, University of Graz, 8010, Austria — 2Department of Applied Physics, Technical University of Vienna, 1040, Austria
A 6H-SiC(0001) surface was found to host a crystalline superstructure consisting of SiO2 after wet chemical treatment. This surface was envisioned as a model system for surface chemistry studies. In order to replicate and optimize this film, chemical and thermal treatments were investigated systematically. Using atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED), an improved cleaning methodology was established, resulting in contaminant-free surfaces (except adventitious C), but they were terminated with amorphous SiO2 instead of a crystalline film. If the sample was treated by repeating the original cleaning technique, which was finished with Extran and milliQ sonication, without subsequent boiling in H2O, the original surface termination could be re-prepared. However, this was accompanied by P and Cr contamination. It is hypothesized that P and/or Cr contamination were ultimately responsible for the crystalline silicon oxide overlayer.
Keywords: SiO2; x-ray photoelectron spectroscopy; non contact atomic force microscopy; thin film crystallization; Phosphorus nucleating agent