Regensburg 2025 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 51: Poster Electronic Structure of Surfaces: Spectroscopy, Surface States
O 51.3: Poster
Dienstag, 18. März 2025, 18:00–20:00, P2
Structural fingerprints in the reflectance anisotropy of P-rich and In-rich AlInP(001) — •Isaac Azahel Ruiz Alvarado1, Mohammad Amin Zare Pour2, Thomas Hannappel2, and Wolf Gero Schmidt1 — 1Lehrstuhl für Theoretische Materialphysik, Universität Paderborn, 33095 Paderborn, Germany — 2Grundlagen von Energiematerialien, Institut für Physik, Technische Universität Ilmenau, 98693 Ilmenau, Germany
The surface optical anisotropy of AlInP(001) surfaces is investigated through experimental and theoretical approaches. Comparison is made between spectra calculated for energetically favored AlInP(001) surface structures with data measured on epitaxially grown Al0.52In0.48P(001) epilayers lattice-matched to GaAs samples. The anisotropies for photon energies below 3 eV provide clear fingerprints for the structure of the outermost surface atomics layers. The negative anisotropies for P-rich AlInP(001) surfaces are related to transitions involving surface states located at the top P-dimers. In contrast, In-rich AlInP(001) surfaces show anisotropies related to surface states localized on the In atoms of the In dimers of the second row. The spectral features at higher energies provide insight into the near surface bulk ordering of AlInP. In particular, optical anisotropies at the AlInP critical point energies are found to be related to the CuPt ordering in the material.
Keywords: III-V Semiconductors; Reflectance Anisotropy Spectroscopy; Surface states; Density functional theory; AlInP