Regensburg 2025 – scientific programme
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O: Fachverband Oberflächenphysik
O 55: Poster Topology and Symmetry-protected Materials
O 55.3: Poster
Tuesday, March 18, 2025, 18:00–20:00, P2
Graphene intercalation of the large gap quantum spin Hall insulator bismuthene — •Lukas Gehrig1,2, Cedric Schmitt1,2, Bing Liu1,2, Jonas Erhardt1,2, Simon Moser1,2, and Ralph Claessen1,2 — 1Physikalisches Institut, Universität Würzburg, D-97074 Würzburg, Germany — 2Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, D-97074 Würzburg, Germany
Bismuthene, a honeycomb monolayer of bismuth atoms synthesized on a SiC(0001) substrate, is a topological insulator with a breakthrough bulk band gap of 800 meV due to giant spin-orbit coupling. The magnitude of this gap exposes bismuthene as a promising candidate for room temperature spintronic applications based on the quantum spin Hall effect. However, oxidation of bismuthene in air confines most experiments on this system to UHV conditions. Here we demonstrate the intercalation of bismuthene between SiC and a single sheet of graphene. This protective layer effectively prevents bismuthene from oxidation, while it fully conserves its structural and topological properties as we readily demonstrate by scanning tunneling microscopy and photoemission spectroscopy. This paves the way for ex-situ experiments and ultimately brings bismuthene closer to the fabrication of spintronic devices.
Keywords: Graphene; Intercalation; Topological Insulator; 2D materials; ARPES