Regensburg 2025 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 6: Oxides and Insulator Surfaces: Structure, Epitaxy and Growth
O 6.8: Vortrag
Montag, 17. März 2025, 12:15–12:30, H8
Elucidating the Growth Mechanism of 2D GaS on Sapphire in a Multitechnique Approach — •Stefan R. Kachel1, 2, Robin Günkel2, Leonard Neuhaus1, Oliver Maßmeyer2, Lukas Erlemeier1, Kassandra Zoltner1, Florian Münster1, Carsten von Hänisch1, Kerstin Volz2, and J. Michael Gottfried1 — 1Department of Chemistry, Philipps-Universität Marburg, Germany — 2Material Sciences Center and Department of Physics, Philipps-Universität Marburg, Germany
The utilization of 2D layers of GaS with its ultraviolet bandgap holds promise for applications in solar-blind photodiodes and LEDs. However, the growth of these 2D layers remains a significant challenge, driving considerable interest in understanding the growth mechanism underlying the metal-organic chemical vapor deposition (MOCVD) process. This study investigates the growth of 2D GaS using conventional precursors as well as a newly synthesized single-source precursor (SSP) on sapphire in a multitechnique approach. Scanning transmission electron microscopy (STEM) reveals that the formation of a closed Ga layer on the sapphire surface is a prerequisite for GaS growth. This finding is supported by temperature-programmed desorption (TPD) experiments showing intact desorption of the S-precursor, while the Ga-precursor decomposes partially even at low temperatures, leaving Ga residues on the surface, as confirmed by X-ray photoelectron spectroscopy (XPS). The new SSP enables the deposition of thin mixed layers of Ga and S on sapphire. Refining such single-source precursors could provide a pathway toward efficient growth of 2D GaS.
Keywords: MOCVD; GaS; TPD; XPS; TEM