Regensburg 2025 – scientific programme
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O: Fachverband Oberflächenphysik
O 67: Ultrafast Electron Dynamics II
O 67.8: Talk
Wednesday, March 19, 2025, 16:45–17:00, H11
Light-induced hidden state studied by ultrafast angle-resolved photoemission spectroscopy — •Junde Liu1, Pei Liu3, Liu Yang3, Sung-Hoon Lee4, Mojun Pan2, Famin Chen2, Jierui Huang2, Bei Jiang2, Mingzhe Hu2, Yuchong Zhang2, Zhaoyang Xie3, Gang Wang3, Mengxue Guan3, Wei Jiang3, Huaixin Yang2, Jianqi Li2, Chenxia Yun2, Zhiwei Wang3, Sheng Meng2, Yugui Yao3, Tian Qian2, and Xun Shi3 — 1University of Göttingen, I. Physikalisches Institut, Germany — 2Institute of Physics, Chinese Academy of Sciences, Beijing, China — 3Beijing Institute of Technology, Beijing, China — 4Kyung Hee University, Yongin, Republic of Korea
The non-volatile and ultrafast optical manipulation of material properties offers profound insights into light-matter interactions and holds great potential for optoelectronic applications. However, the discovery of such transitions is often serendipitous, and their practical implementation remains limited, underscoring the need for systematic investigation. In this talk, I will focus on laser-induced nonvolatile phase transitions in transition metal dichalcogenides (TMDs), highlighting the critical role of interlayer order in the formation of hidden states. By employing ultrafast laser excitations (single-pulse writing, pulse-train erasing and pulse-pair control), systematic angle-resolved photoemission spectroscopy (ARPES) characterizations, and comparative density functional theory (DFT) calculations, I aim to unravel the mechanisms that form and stabilize these hidden states, paving the way for novel methods to optically control low-dimensional materials.
Keywords: ultrafast ARPES; TMDs; Strongly correlated; photo-induced phase transition