Regensburg 2025 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 74: Poster Metal and Semiconductor Substrates: Structure, Epitaxy and Growth

O 74.7: Poster

Mittwoch, 19. März 2025, 18:00–20:00, P2

Epitaxial growth of bismuthene-based transition metal compounds — •Holger Diehm, Bing Liu, Simon Moser, Jörg Schäfer, and Ralph Claessen — Würzburg-Dresden Cluster of Excellence ct.qmat and Physikalisches Institut, Universität Würzburg, D-97074 Würzburg, Germany

This work explores the fabrication of alloy phases between bismuthene - a fully planar honeycomb structure of bismuth atoms on a silicon carbide (0001) substrate - and 3d transition metals (TMs).

Bismuthene is a promising candidate for quantum spin Hall (QSH) effect at room-temperature [1] that shows interacting 1D spin-polarized electrons in a metallic edge channel [2]. While topological protection of the edge channels can be lifted by edge coupling [3], interfacing it with ordered TM-rich phases could locally introduce magnetic moments. This provides a novel platform to explore the effects of broken time-reversal symmetry and its potential impact on the topological phase.

Our work focusses on epitaxially grown bismuthene, garnished with manganese, chromium or cobalt. While bismuthene on silicon carbide shows a rt(3) x rt(3) surface reconstruction in low energy electron diffraction (LEED), incorporation of transition metals causes an additional 3 x 3 phase. In addition, scanning tunneling microscopy (STM) is used to analyze the surface structure on an atomic level.

This study paves the way for both fundamental research and application-oriented development in spintronics.

[1] Science 357, 287 (2017); [2] Nat. Phys. 16, 47 (2020); [3] Nat. Commun. 13, 3480 (2022).

Keywords: Topological Insulators; Bismuthene; Quantum Spin Hall Effect; 3d Transition Metals; Time Reversal Symmetry breaking