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O: Fachverband Oberflächenphysik
O 86: Electronic Structure of Surfaces: Spectroscopy, Surface States II
O 86.7: Vortrag
Donnerstag, 20. März 2025, 16:30–16:45, H2
Analyzing excitonic contributions to reflection anisotropy spectra — •Max Großmann1, Kai Daniel Hanke2, Chris Yannic Bohlemann2, Thomas Hannappel2, Wolf Gero Schmidt3, and Erich Runge1 — 1Theoretical Physics I, Institute of Physics, Technische Universität Ilmenau, 98693 Ilmenau, Germany — 2Fundamentals of Energy Materials, Institute of Physics, Technische Universität Ilmenau, 98693 Ilmenau, Germany — 3Lehrstuhl für Theoretische Materialphysik, Universität Paderborn, 33095 Paderborn, Germany
Reflection anisotropy spectroscopy (RAS) is a powerful optical tool for probing semiconductor surfaces. However, the interpretation of RA spectra is challenging due to the complex interplay of features caused by surface states and so-called surface-induced bulk anisotropy, as well as the significant influence of excitonic effects. Overcoming these challenges requires a close collaboration between experiment and theory. In this work, we combine high-quality low-temperature RAS measurements with state-of-the-art ab initio calculations in the framework of many-body perturbation theory to study the RAS of arsenic-terminated Si(100) surfaces. The excitonic contributions to the RAS are studied in detail through a thorough analysis of the results from a solution of the Bethe-Salpeter equation. Our approach aims to combine experimental observations with theoretical insights to decipher the complex effects that shape RAS spectra and to advance the understanding of the optical properties of semiconductor surfaces.
Keywords: Reflection Anisotropy Spectroscopy; Many-Body Perturbation Theory; Silicon Surfaces; Excitons; Optics