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O: Fachverband Oberflächenphysik
O 88: 2D Materials: Stacking and Heterostructures (joint session O/HL)
O 88.1: Vortrag
Donnerstag, 20. März 2025, 15:00–15:15, H6
Systematic Study of Interlayer Interactions in Transition Metal Dichalcogenide Bilayers Using microARPES — •Thomas Nielsen1, Chakradhar Sahoo1, Alfred Jones1, Zhihao Jiang1, Kenji Watanabe2, Takashi Taniguchi2, Suman Chakraborty4, Prasana Sahoo4, Jill A. Miwa1, Yong P. Chen1,3, and Søren Ulstrup1 — 1Aarhus University, Denmark — 2National Institute for Materials Science, Japan — 3Department of Physics, Purdue University, USA — 4Materials Science Centre, Indian Institute of Technology, India
Stacked transition metal dichalcogenide monolayers are emerging as a platform to study correlated phases such as Mott insulators or Wigner crystallization. Spatially resolved ARPES can potentially visualize the moiré bands and hybridization effects in the electronic structure underpinning these correlated phases. Observing these phenomena in ARPES in a reproducible way remains challenging, motivating systematic studies of interlayer interactions in twisted TMD bilayers. 20 different heterobilayers of WSe2, WS2, MoSe2, and WS2, as well as homobilayers of WSe2 are fabricated with varying twist angles. Their electronic properties are measured using the microARPES branch at the ASTRID2 synchrotron at Aarhus University. Band alignments and hybridization effects are tracked as a function of material composition and twist angle. The used dry-transfer fabrication techniques do not yield the direct observation of flat bands from moiré effects in the valence band. Based on this work future avenues for reproducibly attaining moiré effects in photoemission from TMDs are discussed.
Keywords: TMD homo- and heterobilayers; microARPES; Twistronics; WSe2; Electronic Structure