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O: Fachverband Oberflächenphysik
O 89: Metal and Semiconductor Substrates: Structure, Epitaxy and Growth
O 89.6: Vortrag
Donnerstag, 20. März 2025, 16:15–16:30, H8
Capping of terbium silicide nanostructures on Si(111) — •Markus Bachler1, Milan Kubicki1, Hüseyin Çelik2, Sören Selve3, Martin Franz1, Michael Lehmann2, and Mario Dähne1 — 1Institut für Festkörperphysik, Technische Universität Berlin, 10623, Germany — 2Institut für Optik und Atomare Physik, Technische Universität Berlin, 10623, Germany — 3Zentraleinrichtung Elektronenmikroskopie (ZELMI), Technische Universität Berlin, 10623, Germany
Rare earth silicide films on Si surfaces are of great interest because of their appealing properties, such as extremely low Schottky barrier heights on n-type Si, abrupt interfaces, and the formation of two- and three-dimensional films or one-dimensional nanowires. However, a protective layer is required for further utilisation of these properties, and capping by Si has the further advantage of no lattice mismatch to the substrate and the opportunity to form three-dimensionally stacked nanostructures. For this purpose, rare earth silicides on Si(111) with their very low to no lattice mismatch to Si are very promising for epitaxial capping.
Here we studied capping of thin Tb silicide layers on the Si(111) surface with Si by using scanning tunneling microscopy, cross-sectional high-resolution transmission electron microscopy as well as cross-sectional scanning transmission electron microscopy with energy dispersive X-ray analysis. We observed that overgrowth of the Tb silicide layers with amorphous and crystalline Si leads to intact double layers, demonstrating the stability of the Tb silicide layer upon capping.
Keywords: rare earth silicides; capping; scanning tunneling microscopy; (scanning) transmission electron microscopy