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O: Fachverband Oberflächenphysik
O 89: Metal and Semiconductor Substrates: Structure, Epitaxy and Growth
O 89.9: Vortrag
Donnerstag, 20. März 2025, 17:00–17:15, H8
Growth of two-dimensional Ta-S structures from TaS3 nuclei to TaS islands — •Catherine Grover1, Alice Bremerich1, Kai Mehlich1, Abdus Samad2, Udo Schwingenschlögl2, Carsten Busse1, and Thais Chagas1 — 1Department Physik, Universität Siegen, D-57072 Siegen, Germany — 2Physical Science and Engineering Division, King Abdullah University of Science and Technology, 23955-6900 Thuwal, Saudi Arabia
Transition metal dichalcogenides (TMDCs) are emerging as promising 2D materials, known for their unique physical and electronic properties. Despite the rapid growth of research in this field, the exact mechanisms governing their growth remain largely speculative, especially when compared to more well-understood systems, such as metal-on-metal growth.
In this study, we employ Scanning Tunneling Microscopy (STM) to investigate the growth process of ultrathin tantalum sulfide (Ta-S) phases. We observe the evolution from embedded TaS3 nuclei to Ta3S6 islands, and ultimately to TaS islands. These findings provide new insights into the growth dynamics of Ta-S phases, revealing the underlying processes.
Furthermore, these structural observations are supported by Density Functional Theory (DFT) calculations, which compare the energies of various structures, offering additional validation of the experimental results.
Keywords: Nucleation; Growth; Diffusion; TMDCs; Epitaxy