Regensburg 2025 – scientific programme

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O: Fachverband Oberflächenphysik

O 98: Metal and Semiconductor Substrates: Adsorption and Reactions of Small Molecules

O 98.5: Talk

Friday, March 21, 2025, 11:30–11:45, H8

The Effect of Doping in Inelastic H Atom Scattering from Silicon — •Malte Opfermann, Sophia Tödter, Kerstin Krüger, and Oliver Bünermann — Institut für physikalische Chemie, Georg-August-Universität Göttingen, 37077 Göttingen, Germany

Recent inelastic H atom scattering experiments from the semiconducting Ge(111)c(2x8) have shown a bimodal energy loss distribution. One of the components was narrow with a small energy loss. The other component has shown a broad and large energy loss with an onset equal to the surface band gap.[1] While the low energy loss channel is explained by an adiabatic molecular dynamics simulation, the high energy loss component is not described theoretically yet.

To gain a better understanding of the underlying mechanism, we extended our studies to the Si(100)2x1 surface which is semiconducting as well. Despite its electronic structure being similar to the Ge(111)c(2x8) surface, it shows a different H atom energy-loss distribution. The first component is much broader and the second component does not show a clear onset at the surface band gap, both indicators of electronic effects. To further investigate, we carried out scattering experiments from samples with various doping levels.

[1] Krüger et al., Nat. Chem., DOI:10.1038/s,41557-022-01085-x (2022)

Keywords: Semiconductor; Silicon; Scattering; Hydrogen; Doping