Regensburg 2025 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 11: Superconductivity: Poster
TT 11.36: Poster
Monday, March 17, 2025, 15:00–18:00, P4
Design of a Gate Tunable λ/4 Josephson Parametric Amplifier in an Al/InAs Hybrid Superconductor/Semiconductor Heterostructure — •Vjeko Dimić1, Simon Feyrer1, Alexander Kirchner1, Giorgio Biasiol2, Christoph Strunk1, and Leandro Tosi1,3 — 1Institute of Experimental and Applied Physics, University of Regensburg, Germany — 2CNR-Istituto Officina dei Materiali Laboratorio TASC, Italy — 3Centro Atomico Bariloche, Comision Nacional de Energia Atomica, Argentina
We present the design of a Josephson parametric amplifier based on a distributed λ/4 microwave resonator fabricated on a hybrid Al/InAs heterostructure. The 2DEG hosted in the InAs is used to tailor SNS junctions which terminate the resonator and can be tuned using an electrostatic gate deposited on top [1]. We characterize the microwave response of λ/4 resonators, the losses and the tunability of the resonance frequency resulting from the gate modulation of the Josephson inductance. We show how amplification can be obtained by pumping the gate electrode at twice the resonance frequency.
[1] W. Strickland et al., Phys. Rev. Appl. 19, 034021 (2023).
Keywords: Microwave resonators; Parametric amplifier; Josephson junctions; Al/InAs