Regensburg 2025 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 12: Quantum Transport and Quantum Hall Effects (joint session HL/TT)
TT 12.4: Talk
Monday, March 17, 2025, 17:30–17:45, H15
Utilizing Silicon Qubit Devices for Quantum Electrical Metrology — •Dustin Wittbrodt1, Johannes Christian Bayer1, Lars Schreiber2,3, Janne Lehtinen4, Marcelo Jaime1, and Frank Hohls1 — 1Physikalisch-Technische Bundesanstalt, Braunschweig, Germany — 2RWTH Aachen University, Aachen, Germany — 3Forschungszentrum Juelich, Juelich, Germany — 4SemiQon Technologies Oy, Espoo, Finland
The 2019 redefinition of the SI system established fixed values for fundamental constants such as the elementary charge (e) and the Planck constant (h), enabling the quantum realization of the units of Ampere, Volt, and Ohm. While the quantum realization of Volt and Ohm is well-established, the realization of the Ampere, whether directly through Single Electron Pumps (SEPs) or indirectly via the Volt and Ohm, has yet to achieve the same level of accuracy. Moreover, further device applications in practical circuits require paralelization approaches to achieve higher current outputs. The international project "Advanced Quantum Technology for Metrology of Electrical Currents" (AQuanTEC) aims to upscale SEPs beyond the 1 nA threshold. To achieve this, AQuanTEC explores several strategies, including the use of silicon devices first designed for spin qubit realization. These devices are highly promising due to their potential scalability, driven by ongoing advancements in integrating large numbers of qubits.
Keywords: Single charge transfer; Electrical Quantum Metrology; Silicon Spin Qubit Devices; Quantisied Transport