Regensburg 2025 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 14: Spin Transport and Orbitronics, Spin-Hall Effects I (joint session MA/TT)
TT 14.12: Vortrag
Dienstag, 18. März 2025, 12:30–12:45, H18
Competing ordinary and Hanle magnetoresistance in Pt and Ti thin films — •Sebastian Sailler1, Giacomo Sala2, Denise Reustlen1, Richard Schlitz1, Min-Gu Kang2, Pietro Gambardella2, Sebastian T.B. Goennenwein1, and Michaela Lammel1 — 1Department of Physics, University of Konstanz — 2Department of Materials, ETH Zurich
One of the key elements in spintronics research is the spin Hall effect, allowing to generate spin currents from charge currents. A large spin Hall effect is observed in materials with strong spin orbit coupling, e.g. Pt. Recent research suggests the existence of an orbital Hall effect, the orbital analogue to the spin Hall effect, which also arises in weakly spin orbit coupled materials like Ti, Mn or Cr. In any of these materials, a magnetic field perpendicular to the spin or orbital accumulation leads to additional Hanle dephasing and thereby the Hanle magnetoresistance. Here, we studied the magnetoresistance (MR) of Pt thin films over a wide range of thicknesses. Careful evaluation shows that the MR of our textured samples is dominated by the so-called ordinary MR, while the Hanle effect does not play a significant role. Analyzing the intrinsic properties of Pt films deposited by different groups, we find that next to the resistivity, also the structural properties of the film influence which MR dominates. We further show that this correlation can also be found in orbital Hall active materials like Ti. We conclude that in all materials exhibiting a spin or orbital Hall effect, the Hanle MR and the ordinary MR coexist, and that the sample's purity and crystallinity determines which MR dominates.
Keywords: Magnetoresistance; Spin; Orbital; Hanle