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TT: Fachverband Tiefe Temperaturen

TT 14: Spin Transport and Orbitronics, Spin-Hall Effects I (joint session MA/TT)

TT 14.13: Vortrag

Dienstag, 18. März 2025, 12:45–13:00, H18

Orbital Hanle magnetoresistance in Mn thin films — •Min-Gu Kang, Federica Nasr, Giacomo Sala, and Pietro Gambardella — Department of Materials, ETH Zurich, 8093 Zurich, Switzerland

Momentum-space orbital texture, or orbital character of electrons, enables the orbital Hall effect (OHE), a current-induced flow of nonequilibrium orbital angular momentum in centrosymmetric systems with negligible spin-orbit coupling. This orbital current, which can be orders of magnitude larger than its spin counterpart, offers transformative potential for spin-orbitronics, yet the mechanisms of orbital relaxation remain unclear. In this work, we present temperature-dependent orbital Hanle magnetoresistance and associated orbital relaxation mechanisms in Mn thin films. The results clearly show that the orbital Hanle magnetoresistance depends on the structure of the Mn thin films and can be associated with competing Dyakonov-Perel and Elliott-Yafet orbital relaxation effects. Our study highlights the critical role of orbital relaxation in determining the magnitude of current-induced orbital effects in 3d transition metal films.

Keywords: orbital; spin; Hanle; magnetoresistance; relaxation