Regensburg 2025 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 21: Quantum Dots and Wires: Transport (joint session HL/TT)
TT 21.4: Talk
Tuesday, March 18, 2025, 12:00–12:15, H13
Novel Mixed-Dimensional Reconfigurable Field Effect Transistors — •Sayantan Ghosh1,2, Muhammad Bilal Khan1, Phanish Chava1, Kenji Watanabe3, Takashi Taniguchi3, Slawomir Prucnal1, René Hübner1, Thomas Mikolajick2, Artur Erbe1,2, and Yordan M Georgiev1,4 — 1Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany — 2Technische Universität Dresden, Dresden, Germany — 3National institute for Material Science, Tsukuba, Japan — 4Institute of Electronics, Bulgarian Academy of Sciences, Sofia, Bulgaria
The limitations of CMOS downscaling drive the exploration of alternative device concepts like reconfigurable FETs (RFETs), which can dynamically switch between n- and p-polarity through electrostatic gating. This work introduces a novel mixed-dimensional RFET utilizing 1D silicon (Si) nanowires combined with 2D hexagonal boron nitride (hBN) as a dielectric and encapsulating layer. hBN*s insulating properties, chemical stability, and absence of dangling bonds make it ideal for its use as a dielectric in 1D electronics. The RFET fabrication employs electron beam lithography, reactive ion etching, and flash lamp annealing for precise silicide formation. Mechanically exfoliated hBN flakes (5-10 nm) were integrated using dry stamping transfer, with thickness characterized by microscopy techniques. Device characterization reveals improved subthreshold swing, on-current, and ION/IOFF ratio due to hBN*s 2D passivation, highlighting its potential for advanced nanowire-based RFET architectures.
Keywords: Mixed-dimensional; RFET; Flash Lamp Annealing; hBN; Si Nanowires