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TT: Fachverband Tiefe Temperaturen

TT 35: Topology: Poster

TT 35.2: Poster

Mittwoch, 19. März 2025, 15:00–18:00, P3

Fabrication and characterization of topological insulator-based SET — •Omargeldi Atanov, Junya Feng, and Yoichi Ando — Physics Institute II, University of Cologne, Cologne, Germany

When a topological insulator (TI) Josephson junction is driven through a topological phase transition, the ground-state parity of the system is expected to change, potentially due to the fusion of Majorana bound state (MBS) pairs. Measuring the individual parity of MBS pairs is a critical step in understanding the mechanisms behind these parity changes and for more complex braiding operations. We present the fabrication and characterization of single-electron transistors (SETs) based on bulk-insulating BiSbTeSe2 flakes, which also serve as the material for TI Josephson junctions. This approach simplifies the process flow of the devices and improves fabrication yield. Initial characterization of devices demonstrates well-formed Coulomb diamonds that confirms the robust charge quantization and SET performance. These results pave the way for integrating SETs with TI Josephson junctions and measuring MBS parity in the near future.

Keywords: Single electron transistor; Topological insulator; Majorana bound state; Parity detection; Josephson junction