Regensburg 2025 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

TT: Fachverband Tiefe Temperaturen

TT 37: Correlated Electrons: Poster

TT 37.33: Poster

Wednesday, March 19, 2025, 15:00–18:00, P4

Single crystal synthesis of FeSb₂ and investigation of its electronic transport properties — •Maximilian van de Loo, Maik Golombiewski, Andreas Kreyssig, and Anna E. Böhmer — Experimentalphysik IV, Ruhr-Universität Bochum, 44801 Bochum, Germany

FeSb₂ is a diamagnetic narrow band gap semiconductor with interesting electronic transport properties [1]. Huge thermoelectric power factor and a paramagnetic crossover have been reported at low temperatures [1, 2] and attempts to influence and understand these properties by doping have been made [3]. A metal-semiconductor crossover along the b axis can be observed under certain growth conditions. We have synthesized single crystals of FeSb₂ via self-flux growth and successfully realized substitutions (Fe_1−xTM_x)Sb₂ with different transition metals (TM). The samples were characterized with electron microscopy, energy-dispersive x-ray spectroscopy, powder x-ray diffraction and Laue diffraction measurements, as well as electrical resistivity measurement. The appearance of the metal-semiconductor crossover has been investigated by varying the growth conditions.

We acknowledge support by the Deutsche Forschungsgemeinschaft (DFG) under CRC/TRR 288 (Project A02).

[1] C. Petrovic, J. W. Kim, S. L. Bud’ko, A. I. Goldman, P. C. Canfield, W. Choe, and G. J. Miller, Phys. Rev. B 67, (2003).

[2] C. Homes, Q. Du, C. Petrovic, W. H. Brito, S. Choi, and G. Kotliar, Sci. Rep. 8, (2018).

[3] Y. Cao, S. Yuan, M. Liu, B. Kang, B. Lu, J. Zhang, and S. Cao, J. Cryst. Growth 363, (2013).

Keywords: Crystal growth; Altermagnet; Metal-semiconductor transition