Regensburg 2025 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 37: Correlated Electrons: Poster
TT 37.35: Poster
Mittwoch, 19. März 2025, 15:00–18:00, P4
Fluctuation Spectroscopy on La2NiO4+δ RRAM devices — •Demian Ranftl1, Yingxin Li2, Tristan Stadler1, Eszter Piros2, Aleksandra Koroleva3, Lambert Alff2, Mónica Burriel3, and Jens Müller1 — 1Institute of Physics, Goethe University, Frankfurt am Main, Germany — 2Institute of Materials Science, TU Darmstadt, Darmstadt, Germany — 3Laboratory in Materials Science and Physical Engineering, Université Grenoble Alpes, Grenoble, France
Memristive devices, whose resistance is programmable and retainable, are considered to be most promising for the next generation of non-volatile memory. Low-frequency current noise spectroscopy is a non-invasive investigative tool for probing the effect of defects on resistive switching [1, 2]. Annealing La2NiO4+δ films under inert (Ar) or oxidising (O2) atmospheres results in devices with filamentary and interfacial-type resistive switching respectively [3]. In this work we explore the effect of the switching mechanism, readout voltage and area dependency on the noise characteristics of LNO-based RRAM.
[1] E. Piros, M. Lonsky et al. Phys. Rev. Appl. 14 (2020)
[2] T. Thyzel, M. Kopp et al. Meas. Sci. Technol. 36 (2025)
[3] A. Koroleva et al. Adv. Electron. Mater. 2400096 (2024)
Keywords: RRAM; Memristor; LNO; Noise