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TT: Fachverband Tiefe Temperaturen
TT 45: 2D Materials: Electronic Structure and Exitations III (joint session O/HL/TT)
TT 45.8: Vortrag
Donnerstag, 20. März 2025, 12:15–12:30, H11
Visualizing and controlling charge states of metal nanoislands on a two dimensional semiconductor — •Junho Bang1, Byeongin Lee1, Jian-Feng Ge2, and Doohee Cho1 — 1Department of Physics, Yonsei University, Seoul, Korea — 2Department of Topological Quantum Chemistry, Max Planck Institute for Chemical Physics of Solids, München ,Germany
Nanoscale objects show unique electronic behaviors when weakly coupled to electrodes. Coulomb blockade (CB) can occur in such systems, where the repulsive Coulomb interaction between electrons prevents additional electrons from entering the quantum dots, hindering their flow. Single electron tunneling occurs by these correlated electron transports, leading to the discrete charge states of objects in double barrier tunneling junctions. Despite enormous progress, challenges remain in precisely controlling the interplay between objects' charge states and tunneling dynamics under varying conditions. Here, we visualize the charge states and their spatial variation on the random array of the indium islands on two-dimensional semiconductor black phosphorus using scanning tunneling microscopy and spectroscopy. Our spatially resolved tunneling spectra reveal that the junction capacitance varies across the islands. Furthermore, we find that the CB features are visible outside the islands, which is attributed to the remote gating of the islands. Our work advances the manipulation of electron transport at the nanoscale, which will be helpful in the application of nanoscale object-based single-electron devices.
Keywords: Metal nanoislands; 2D semiconductor; Coulomb blockade; Scanning tunneling microscopy