TT 45: 2D Materials: Electronic Structure and Exitations III (joint session O/HL/TT)
Thursday, March 20, 2025, 10:30–12:30, H11
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10:30 |
TT 45.1 |
Charge ordered phases in the hole-doped triangular Mott insulator 4Hb-TaS2 — •Byeongin Lee, Junho Bang, Hyungryul Yang, Sunghun Kim, Dirk Wulferding, and Doohee Cho
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10:45 |
TT 45.2 |
Superlattice engineering in graphene and 1T-NbSe2 heterostructures — •Keda Jin, Lennart Klebl, Junting Zhao, Tobias Wichmann, F. Stefan Tautz, Felix Lüpke, Dante Kennes, Jose Martinez-Castro, and Markus Ternes
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11:00 |
TT 45.3 |
Influence of Edge Termination on the Electronic Structure of Single Layer MoS2 on Graphene/Ir(111) — •Alice Bremerich, Marco Thaler, Thais Chagas, Borna Pielic, Laerte Patera, and Carsten Busse
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11:15 |
TT 45.4 |
magnetic-field-induced dimensionality transition of charge density waves in strained 2H-NbSe2 — •Ryo Ichikawa, Yukiko Takahashi, Eiichi Inami, and Toyo Kazu Yamada
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11:30 |
TT 45.5 |
Ultrafast phonons dynamics of monolayer transition metal dichalcogenides — •yiming pan and fabio caruso
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11:45 |
TT 45.6 |
Probing Excitonic Properties and Structural Effects in WS2-Graphene Heterostructures Using EELS and DFT-BSE Modeling — •Max Bergmann, Jürgen Belz, Oliver Maßmeyer, Robin Günkel, Badrosadat Ojaghi Dogahe, Andreas Beyer, Stefan Wippermann, and Kerstin Volz
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12:00 |
TT 45.7 |
Optical excitations in 2H-MoS2 bilayers under pressure — •Jan-Hauke Graalmann, Paul Steeger, Rudolf Bratschitsch, and Michael Rohlfing
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12:15 |
TT 45.8 |
Visualizing and controlling charge states of metal nanoislands on a two dimensional semiconductor — •Junho Bang, Byeongin Lee, Jian-Feng Ge, and Doohee Cho
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