Regensburg 2025 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 46: Transport Properties (joint session HL/TT)

TT 46.5: Vortrag

Donnerstag, 20. März 2025, 16:15–16:30, H13

Fabrication and Characterisation of Short-channel Junctionless Nanowire Transistors — •Alessandro Puddu — Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany

The downscaling limitations of conventional planar transistors require the investigation of alternative device configurations. Because of their excellent electrostatic control and intrinsic scalability, junctionless nanowire transistors (JNTs) present a feasible solution and are highly desirable for next-generation electronics. The key factor that characterizes the JNTs is the absence of pn-junctions. This provides several benefits, such as an easier fabrication process since the devices do not require abrupt doping profiles within the nanowire channel, which is now uniformly doped.

This work focuses on the fabrication and characterisation of short-channel Si JNTs. A top-down approach based on e-beam lithography (EBL) and inductively coupled plasma reactive ion etching (ICP-RIE) was used to fabricate the Si nanowires. The device characterisation showed improved performances due to the channel length shrinking.

Keywords: Silicon Nanowires; Junctionless Transistors; Short-channel Transistors; Electron Beam Lithography; Reactive Ion Etching