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TT: Fachverband Tiefe Temperaturen
TT 47: Fluctuations, Noise and Other Transport Topics (joint session TT/DY)
TT 47.1: Vortrag
Donnerstag, 20. März 2025, 15:00–15:15, H31
Noise and reliability characterization of ferroelectric field-effect transistors under cryogenic conditions — •Yannick Raffel1, Shouzhuo Yang1, Oliver Ostien1, Maik Simon1, Thomas Kämpfe1, Konrad Seidel1, Maximilian Lederer1, and Johannes Heitmann2 — 1Fraunhofer Institute IPMS-CNT, Dresden, Germany — 2TU Bergakademie Freiberg, Freiberg, Germany
This study explores the impact of defects in the ferroelectric (FE) hafnium oxide (HfO2) layer on the low-frequency noise (LFN) characteristics of HfO2-based ferroelectric field-effect transistors (FeFETs), which show great potential as memory devices for quantum computing applications under cryogenic conditions. The investigation focuses on device degradation and material-dependent changes under various temperature conditions, including cryogenic temperatures as low as 2 K. A clear link between device reliability and flicker noise was identified. Initially, the endurance of the devices was evaluated across a range of temperatures, including cryogenic conditions. Subsequently, their data retention behavior was characterized, revealing a notably prolonged electron detrapping time at 2 K. In addition, flicker noise trends were analyzed and discussed, shedding light on key factors influencing device optimization and reliability.
Keywords: ferroelectric FETs (Fe- FETs); memory reliability; non-volatile random access memory (NVRAM); Flicker Noise; Dominant Noise Source