Regensburg 2025 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 49: Graphene and 2D Materials (joint session TT/HL)

TT 49.11: Talk

Thursday, March 20, 2025, 17:45–18:00, H33

Electronic transport and anti-super-Klein tunneling in few-layer black phosphorus — •Jorge Alfonso Lizarraga Brito¹, Yonatan Bentancur Ocampo², and Thomas Stegmann¹ — ¹Instituto de Ciencias Físicas, Universidad Nacional Autónoma de México, Cuernavaca, México — ²Instituto de Física, Universidad Nacional Autónoma de México, Ciudad de México, México

The electronic transport of few-layer black phosphorus is analyzed theoretically. This work was performed using recent experimental results obtained by µ-ARPES, where tight-binding parameters up to the 4th nearest neighbors within and between the layers were estimated. It is confirmed that the anisotropic band structure of few-layer black phosphorus leads to highly anisotropic transport properties. Most prominently, it is found that the electrons can pass through a potential barrier aligned in a certain crystallographic direction, while for potential barriers rotated by 90 degrees, the transport is completely blocked (anti-super-Klein tunneling). Finally, the study was extended to the case where the top layer of the system is oxidized, showing that the electronic transport is significantly reduced in the oxidized layers, whereas it can be largely unaffected in the central layers.

Keywords: Phosphorene; Few-layer black phosphorus; Electron Transport; Anti-Super-Klein tunneling