Regensburg 2025 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 49: Graphene and 2D Materials (joint session TT/HL)

TT 49.3: Vortrag

Donnerstag, 20. März 2025, 15:30–15:45, H33

Resistively Detected Electron Spin Resonance and g Factor in Few-Layer Exfoliated MoS₂ Devices — •Chithra H. Sharma^1,2, Appanna Parvangada², Lars Tiemann², Kai Rossnagel^1,3, Jens Martin⁴, and Robert H. Blick^2,5 — ¹Christian-Albrechts-Universität zu Kiel, 24098 Kiel, Germany — ²Universität Hamburg, Luruper Chaussee 149, 22761 Hamburg, Germany — ³Deutsches Elektronen-Synchrotron DESY, 22607 Hamburg, Germany — ⁴Leibniz Institut für Kristallzüchtung, 12489 Berlin, Germany — ⁵University of Wisconsin-Madison, University Ave. 1550, Madison, 53706, Wisconsin, USA

MoS₂ has recently emerged as a promising material for enabling quantum devices and spintronic applications. In this context, the demonstration of resistively detected electron spin resonance (RD-ESR) and the determination and improved physical understanding of the g factor are of great importance. However, its application and RD-ESR studies have been limited so far by Schotttky or high-resistance contacts to MoS₂. Here, we exploit naturally n-doped few-layer MoS₂ devices with ohmic tin (Sn) contacts that allow the electrical study of spin phenomena. Resonant excitation of electron spins and resistive detection is a possible path to exploit the spin effects in MoS₂ devices. Using RD-ESR, we determine the g factor of few-layer MoS₂ to be ≈1.92 and observe that the g factor value is independent of the charge carrier density within the limits of our measurements.

Keywords: Electron spin resonance; Transition metal dichalcogenide; g factor; MoS2; Ohmic contact